MTDN9973Q8
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTDN9973Q8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
SOP-8
MTDN9973Q8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTDN9973Q8
Datasheet (PDF)
..1. Size:383K cystek
mtdn9973q8.pdf 
Spec. No. : C418Q8 Issued Date : 2007.09.20 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9973Q8 Description The MTDN9973Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a
7.1. Size:383K cystek
mtdn9971q8.pdf
Spec. No. : C415Q8 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9971Q8 Description The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a
8.1. Size:422K cystek
mtdn9926q8.pdf
Spec. No. : C747Q8 Issued Date : 2009.11.09 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 20VMTDN9926Q8 ID 6A28m RDSON(MAX) Description The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8
8.2. Size:388K cystek
mtdn9922q8.pdf
Spec. No. : C425Q8 Issued Date : 2007.12.06 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9922Q8 Description The MTDN9922Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a
8.3. Size:384K cystek
mtdn9946q8.pdf
Spec. No. : C598Q8 Issued Date : 2009.11.11 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30VMTDN9946Q8 ID 5A35m RDSON(MAX) Description The MTDN9946Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8
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