MTE13N08J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTE13N08J3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 53 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 90 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 189 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0116 Ohm
   Paquete / Cubierta: TO-252

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MTE13N08J3 Datasheet (PDF)

..1. Size:285K cystek
mte13n08j3.pdf

Spec. No. : C585J3 Issued Date : 2013.05.30 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 80VMTE13N08J3 ID 53ARDS(ON)@VGS=10V, ID=20A 11.6 m(typ)RDS(ON)@VGS=7V, ID=20A 12 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

9.1. Size:341K cystek
mte130n20fp.pdf

Spec. No. : C966FP Issued Date : 2014.05.13 CYStech Electronics Corp.Revised Date : 2014.05.15 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETMTE130N20FP BVDSS 200VID @ VGS=10V 17ARDS(ON)@VGS=10V, ID=9A 150 m(typ) Features Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating v

9.2. Size:394K cystek
mte130n20kj3.pdf

Spec. No. : C952J3 Issued Date : 2014.02.27 CYStech Electronics Corp.Revised Date : 2014.03.05 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 BVDSS 200VID 18A142m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and

9.3. Size:296K cystek
mte130n20kfp.pdf

Spec. No. : C952FP Issued Date : 2013.12.24 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETMTE130N20KFP BVDSS 200VID @ VGS=10V 17ARDS(ON)@VGS=10V, ID=9A 134 m(typ) Features ESD protected Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side in

9.4. Size:369K cystek
mte130n20j3.pdf

Spec. No. : C966J3 Issued Date : 2014.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE130N20J3 ID@VGS=10V, TC=25C 18A ID@VGS=10V, TA=25C 1.9A 156m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic Pb-free lead pla

9.5. Size:337K cystek
mte130n20kf3.pdf

Spec. No. : C952F3 Issued Date : 2014.06.03 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KF3 BVDSS 200VID 18A143m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and RoHS compli

9.6. Size:355K cystek
mte130n20ke3.pdf

Spec. No. : C952E3 Issued Date : 2013.12.27 CYStech Electronics Corp.Revised Date : 2014.03.05 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE130N20KE3 BVDSS 200VID 18A143m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic RoHS compliant package

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