All MOSFET. MTE13N08J3 Datasheet

 

MTE13N08J3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTE13N08J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0116 Ohm
   Package: TO-252

 MTE13N08J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTE13N08J3 Datasheet (PDF)

 ..1. Size:285K  cystek
 mte13n08j3.pdf

MTE13N08J3 MTE13N08J3

Spec. No. : C585J3 Issued Date : 2013.05.30 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 80VMTE13N08J3 ID 53ARDS(ON)@VGS=10V, ID=20A 11.6 m(typ)RDS(ON)@VGS=7V, ID=20A 12 m(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

 9.1. Size:341K  cystek
 mte130n20fp.pdf

MTE13N08J3 MTE13N08J3

Spec. No. : C966FP Issued Date : 2014.05.13 CYStech Electronics Corp.Revised Date : 2014.05.15 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETMTE130N20FP BVDSS 200VID @ VGS=10V 17ARDS(ON)@VGS=10V, ID=9A 150 m(typ) Features Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating v

 9.2. Size:394K  cystek
 mte130n20kj3.pdf

MTE13N08J3 MTE13N08J3

Spec. No. : C952J3 Issued Date : 2014.02.27 CYStech Electronics Corp.Revised Date : 2014.03.05 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 BVDSS 200VID 18A142m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and

 9.3. Size:296K  cystek
 mte130n20kfp.pdf

MTE13N08J3 MTE13N08J3

Spec. No. : C952FP Issued Date : 2013.12.24 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETMTE130N20KFP BVDSS 200VID @ VGS=10V 17ARDS(ON)@VGS=10V, ID=9A 134 m(typ) Features ESD protected Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side in

 9.4. Size:369K  cystek
 mte130n20j3.pdf

MTE13N08J3 MTE13N08J3

Spec. No. : C966J3 Issued Date : 2014.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE130N20J3 ID@VGS=10V, TC=25C 18A ID@VGS=10V, TA=25C 1.9A 156m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic Pb-free lead pla

 9.5. Size:337K  cystek
 mte130n20kf3.pdf

MTE13N08J3 MTE13N08J3

Spec. No. : C952F3 Issued Date : 2014.06.03 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KF3 BVDSS 200VID 18A143m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and RoHS compli

 9.6. Size:355K  cystek
 mte130n20ke3.pdf

MTE13N08J3 MTE13N08J3

Spec. No. : C952E3 Issued Date : 2013.12.27 CYStech Electronics Corp.Revised Date : 2014.03.05 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE130N20KE3 BVDSS 200VID 18A143m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic RoHS compliant package

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TPD60R350C

 

 
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