MTE13N08J3 Specs and Replacement

Type Designator: MTE13N08J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0116 Ohm

Package: TO-252

MTE13N08J3 substitution

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MTE13N08J3 datasheet

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MTE13N08J3

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MTE13N08J3

Spec. No. C966FP Issued Date 2014.05.13 CYStech Electronics Corp. Revised Date 2014.05.15 Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE130N20FP BVDSS 200V ID @ VGS=10V 17A RDS(ON)@VGS=10V, ID=9A 150 m (typ) Features Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating v... See More ⇒

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MTE13N08J3

Spec. No. C952J3 Issued Date 2014.02.27 CYStech Electronics Corp. Revised Date 2014.03.05 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 BVDSS 200V ID 18A 142m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and... See More ⇒

 9.3. Size:296K  cystek
 mte130n20kfp.pdf pdf_icon

MTE13N08J3

Spec. No. C952FP Issued Date 2013.12.24 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE130N20KFP BVDSS 200V ID @ VGS=10V 17A RDS(ON)@VGS=10V, ID=9A 134 m (typ) Features ESD protected Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side in... See More ⇒

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Detailed specifications: MTE040N20P3, MTE05N08E3, MTE05N10E3, MTE130N20FP, MTE130N20KE3, MTE130N20KF3, MTE130N20KFP, MTE130N20KJ3, IRFZ24N, MTE1K0P15KN3, MTE1K8N25J3, MTE1K8N25KJ3, MTE1K8N25KM3, MTE20N10FP, MTE50N10FP, MTE50N15FP, MTE50N15J3

Keywords - MTE13N08J3 MOSFET specs

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