MTN1012C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTN1012C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.6 V
   Qgⓘ - Carga de la puerta: 0.76 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 14 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
   Paquete / Cubierta: SOT-523

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MTN1012C3 Datasheet (PDF)

..1. Size:364K cystek
mtn1012c3.pdf

Spec. No. : C814C3 Issued Date : 2012.05.15 CYStech Electronics Corp.Revised Date : 2014.06.06 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN1012C3 ID 560mARDSON@VGS=4.5V, ID=600mA 320m(typ) RDSON@VGS=2.5V,ID=400mA 510m(typ) RDSON@VGS=1.8V,ID=350mA 980m(typ) Features Simple drive requirement Small package outline Pb-free lead p

7.1. Size:712K cystek
mtn1012zc3.pdf

Spec. No. : C588C3 Issued Date : 2011.01.05 CYStech Electronics Corp.Revised Date : Page No. : 1/7 ESD protected N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN1012ZC3 ID 0.7A300m@4.5V/0.6A 340m@2.5V/0.5A RDSON(TYP)Description 420m@1.8V/0.4A Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device

9.1. Size:665K cystek
mtn10n65ea.pdf

Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V @Tj=150 RDS(ON) : 0.85 MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l

9.2. Size:236K cystek
mtn10n40e3.pdf

Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 400V RDS(ON) : 0.47(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

9.3. Size:317K cystek
mtn10n65fpg.pdf

Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

9.4. Size:664K cystek
mtn10n70ea.pdf

Spec. No. : C725EA-A Issued Date : 2010.06.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 770V @Tj=150 RDS(ON) : 0.92 MTN10N70EA ID : 9.5A Description The MTN10N70EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

9.5. Size:332K cystek
mtn10n60fp.pdf

Spec. No. : C406FP Issued Date : 2008.12.02 CYStech Electronics Corp.Revised Date :2014.02.10 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60FP ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

9.6. Size:355K cystek
mtn10n65fp.pdf

Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FP ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

9.7. Size:307K cystek
mtn10n60e3.pdf

Spec. No. : C406E3 Issued Date : 2010.09.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60E3 ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an

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