MTN1012C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN1012C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.56 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 14 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
Paquete / Cubierta: SOT-523
MTN1012C3 Datasheet (PDF)
mtn1012c3.pdf

Spec. No. : C814C3 Issued Date : 2012.05.15 CYStech Electronics Corp.Revised Date : 2014.06.06 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN1012C3 ID 560mARDSON@VGS=4.5V, ID=600mA 320m(typ) RDSON@VGS=2.5V,ID=400mA 510m(typ) RDSON@VGS=1.8V,ID=350mA 980m(typ) Features Simple drive requirement Small package outline Pb-free lead p
mtn1012zc3.pdf

Spec. No. : C588C3 Issued Date : 2011.01.05 CYStech Electronics Corp.Revised Date : Page No. : 1/7 ESD protected N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN1012ZC3 ID 0.7A300m@4.5V/0.6A 340m@2.5V/0.5A RDSON(TYP)Description 420m@1.8V/0.4A Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device
mtn10n65ea.pdf

Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V @Tj=150 RDS(ON) : 0.85 MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l
mtn10n40e3.pdf

Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 400V RDS(ON) : 0.47(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
Otros transistores... MTEJ0P20J3 , MTEJ0P20L3 , MTF50P02J3 , MTN003N02Y3 , MTN003N03S3 , MTN0401LA3 , MTN0410L3 , MTN04N03F3 , IRFP260N , MTN1012ZC3 , MTN10N40E3 , MTN10N60E3 , MTN10N60FP , MTN10N65EA , MTN10N65FP , MTN10N65FPG , MTN10N70EA .
History: SUD50N024-09P | APT60N90JC3 | S68N08ZS
History: SUD50N024-09P | APT60N90JC3 | S68N08ZS



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