MTN1012C3 Todos los transistores

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 mtn1012c3.pdf

Spec. No. C814C3 Issued Date 2012.05.15 CYStech Electronics Corp. Revised Date 2014.06.06 Page No. 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN1012C3 ID 560mA RDSON@VGS=4.5V, ID=600mA 320m (typ) RDSON@VGS=2.5V,ID=400mA 510m (typ) RDSON@VGS=1.8V,ID=350mA 980m (typ) Features Simple drive requirement Small package outline Pb-free lead p

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 mtn1012zc3.pdf

Spec. No. C588C3 Issued Date 2011.01.05 CYStech Electronics Corp. Revised Date Page No. 1/7 ESD protected N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN1012ZC3 ID 0.7A 300m @4.5V/0.6A 340m @2.5V/0.5A RDSON(TYP) Description 420m @1.8V/0.4A Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device

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 mtn10n65ea.pdf

Spec. No. C725EA Issued Date 2010.02.25 CYStech Electronics Corp. Revised Date 2010.12.29 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 700V @Tj=150 RDS(ON) 0.85 MTN10N65EA ID 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l

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 mtn10n40e3.pdf

Spec. No. C586E3 Issued Date 2011.04.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 400V RDS(ON) 0.47 (typ.) MTN10N40E3 ID 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 9.3. Size:317K  cystek
 mtn10n65fpg.pdf

Spec. No. C725FP Issued Date 2009.06.15 CYStech Electronics Corp. Revised Date 2011.08.15 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.82 MTN10N65FPG ID 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

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 mtn10n70ea.pdf

Spec. No. C725EA-A Issued Date 2010.06.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 770V @Tj=150 RDS(ON) 0.92 MTN10N70EA ID 9.5A Description The MTN10N70EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

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 mtn10n60fp.pdf

Spec. No. C406FP Issued Date 2008.12.02 CYStech Electronics Corp. Revised Date 2014.02.10 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDSON(MAX) 0.75 MTN10N60FP ID 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 9.6. Size:355K  cystek
 mtn10n65fp.pdf

Spec. No. C725FP Issued Date 2009.06.15 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.82 MTN10N65FP ID 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

 9.7. Size:307K  cystek
 mtn10n60e3.pdf

Spec. No. C406E3 Issued Date 2010.09.27 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDSON(MAX) 0.75 MTN10N60E3 ID 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an