MTN1012C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTN1012C3
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.6 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.56 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 0.76 nC
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 14 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.32 Ohm
Тип корпуса: SOT-523
MTN1012C3 Datasheet (PDF)
mtn1012c3.pdf
Spec. No. : C814C3 Issued Date : 2012.05.15 CYStech Electronics Corp.Revised Date : 2014.06.06 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN1012C3 ID 560mARDSON@VGS=4.5V, ID=600mA 320m(typ) RDSON@VGS=2.5V,ID=400mA 510m(typ) RDSON@VGS=1.8V,ID=350mA 980m(typ) Features Simple drive requirement Small package outline Pb-free lead p
mtn1012zc3.pdf
Spec. No. : C588C3 Issued Date : 2011.01.05 CYStech Electronics Corp.Revised Date : Page No. : 1/7 ESD protected N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN1012ZC3 ID 0.7A300m@4.5V/0.6A 340m@2.5V/0.5A RDSON(TYP)Description 420m@1.8V/0.4A Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device
mtn10n65ea.pdf
Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V @Tj=150 RDS(ON) : 0.85 MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l
mtn10n40e3.pdf
Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 400V RDS(ON) : 0.47(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
mtn10n65fpg.pdf
Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn10n70ea.pdf
Spec. No. : C725EA-A Issued Date : 2010.06.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 770V @Tj=150 RDS(ON) : 0.92 MTN10N70EA ID : 9.5A Description The MTN10N70EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn10n60fp.pdf
Spec. No. : C406FP Issued Date : 2008.12.02 CYStech Electronics Corp.Revised Date :2014.02.10 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60FP ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn10n65fp.pdf
Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FP ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi
mtn10n60e3.pdf
Spec. No. : C406E3 Issued Date : 2010.09.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60E3 ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918