MTN10N40E3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN10N40E3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 117 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm
Paquete / Cubierta: TO-220AB
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MTN10N40E3 Datasheet (PDF)
mtn10n40e3.pdf

Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 400V RDS(ON) : 0.47(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
mtn10n65ea.pdf

Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V @Tj=150 RDS(ON) : 0.85 MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l
mtn10n65fpg.pdf

Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn10n70ea.pdf

Spec. No. : C725EA-A Issued Date : 2010.06.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 770V @Tj=150 RDS(ON) : 0.92 MTN10N70EA ID : 9.5A Description The MTN10N70EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
Otros transistores... MTF50P02J3 , MTN003N02Y3 , MTN003N03S3 , MTN0401LA3 , MTN0410L3 , MTN04N03F3 , MTN1012C3 , MTN1012ZC3 , IRF630 , MTN10N60E3 , MTN10N60FP , MTN10N65EA , MTN10N65FP , MTN10N65FPG , MTN10N70EA , MTN12N60E3 , MTN12N60FP .
History: KP748B | 3N80G-TM3-T | 2SK3211L
History: KP748B | 3N80G-TM3-T | 2SK3211L



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