MTN10N40E3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN10N40E3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 117 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm

Encapsulados: TO-220AB

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MTN10N40E3 datasheet

 ..1. Size:236K  cystek
 mtn10n40e3.pdf pdf_icon

MTN10N40E3

Spec. No. C586E3 Issued Date 2011.04.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 400V RDS(ON) 0.47 (typ.) MTN10N40E3 ID 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 8.1. Size:665K  cystek
 mtn10n65ea.pdf pdf_icon

MTN10N40E3

Spec. No. C725EA Issued Date 2010.02.25 CYStech Electronics Corp. Revised Date 2010.12.29 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 700V @Tj=150 RDS(ON) 0.85 MTN10N65EA ID 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l

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 mtn10n65fpg.pdf pdf_icon

MTN10N40E3

Spec. No. C725FP Issued Date 2009.06.15 CYStech Electronics Corp. Revised Date 2011.08.15 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.82 MTN10N65FPG ID 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 8.3. Size:664K  cystek
 mtn10n70ea.pdf pdf_icon

MTN10N40E3

Spec. No. C725EA-A Issued Date 2010.06.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 770V @Tj=150 RDS(ON) 0.92 MTN10N70EA ID 9.5A Description The MTN10N70EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

MOSTRAR MÁS

Otros transistores... MTF50P02J3, MTN003N02Y3, MTN003N03S3, MTN0401LA3, MTN0410L3, MTN04N03F3, MTN1012C3, MTN1012ZC3, IRF640N, MTN10N60E3, MTN10N60FP, MTN10N65EA, MTN10N65FP, MTN10N65FPG, MTN10N70EA, MTN12N60E3, MTN12N60FP