MTN10N40E3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN10N40E3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 117
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47
Ohm
Package:
TO-220AB
MTN10N40E3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN10N40E3
Datasheet (PDF)
..1. Size:236K cystek
mtn10n40e3.pdf 
Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 400V RDS(ON) : 0.47(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
8.1. Size:665K cystek
mtn10n65ea.pdf
Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V @Tj=150 RDS(ON) : 0.85 MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l
8.2. Size:317K cystek
mtn10n65fpg.pdf
Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
8.3. Size:664K cystek
mtn10n70ea.pdf
Spec. No. : C725EA-A Issued Date : 2010.06.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 770V @Tj=150 RDS(ON) : 0.92 MTN10N70EA ID : 9.5A Description The MTN10N70EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
8.4. Size:332K cystek
mtn10n60fp.pdf
Spec. No. : C406FP Issued Date : 2008.12.02 CYStech Electronics Corp.Revised Date :2014.02.10 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60FP ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
8.5. Size:355K cystek
mtn10n65fp.pdf
Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FP ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi
8.6. Size:307K cystek
mtn10n60e3.pdf
Spec. No. : C406E3 Issued Date : 2010.09.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60E3 ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an
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