MTN10N60E3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN10N60E3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 185 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 46 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.68 Ohm
Paquete / Cubierta: TO-220AB
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MTN10N60E3 Datasheet (PDF)
mtn10n60e3.pdf
Spec. No. : C406E3 Issued Date : 2010.09.27 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60E3 ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance an
mtn10n60fp.pdf
Spec. No. : C406FP Issued Date : 2008.12.02 CYStech Electronics Corp.Revised Date :2014.02.10 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(MAX) : 0.75 MTN10N60FP ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn10n65ea.pdf
Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V @Tj=150 RDS(ON) : 0.85 MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l
mtn10n65fpg.pdf
Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn10n65fp.pdf
Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.82 MTN10N65FP ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MS9N90
History: MS9N90
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