MTN12N65FP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN12N65FP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 51 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO-220FP

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MTN12N65FP datasheet

 ..1. Size:407K  cystek
 mtn12n65fp.pdf pdf_icon

MTN12N65FP

Spec. No. C802FP Issued Date 2010.01.08 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.6 (typ.) MTN12N65FP ID 12A Description The MTN12N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 7.1. Size:453K  cystek
 mtn12n60fp.pdf pdf_icon

MTN12N65FP

Spec. No. C743FP Issued Date 2011.05.09 CYStech Electronics Corp. Revised Date 2014.05.15 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 0.6 typ. MTN12N60FP ID 12A Description The MTN12N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 7.2. Size:304K  cystek
 mtn12n60e3.pdf pdf_icon

MTN12N65FP

Spec. No. C743E3 Issued Date 2009.10.08 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 660V @Tj=150 C RDS(ON) 0.65 MTN12N60E3 ID 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resist

 7.3. Size:310K  cystek
 mtn12n60bfp.pdf pdf_icon

MTN12N65FP

Spec. No. C164FP Issued Date 2015.03.04 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 0.46 typ. MTN12N60BFP ID 12A Description The MTN12N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

MOSTRAR MÁS

Otros transistores... MTN10N60E3, MTN10N60FP, MTN10N65EA, MTN10N65FP, MTN10N65FPG, MTN10N70EA, MTN12N60E3, MTN12N60FP, P55NF06, MTN1308E3, MTN1322S3, MTN138KS3, MTN138ZN3, MTN13N50E3, MTN13N50FP, MTN14N60FP, MTN15N50E3