MTN12N65FP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MTN12N65FP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 185 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO-220FP
Аналог (замена) для MTN12N65FP
MTN12N65FP Datasheet (PDF)
mtn12n65fp.pdf

Spec. No. : C802FP Issued Date : 2010.01.08 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.6 (typ.) MTN12N65FP ID : 12A Description The MTN12N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on
mtn12n60fp.pdf

Spec. No. : C743FP Issued Date : 2011.05.09 CYStech Electronics Corp.Revised Date : 2014.05.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS :600V RDS(ON) : 0.6 typ. MTN12N60FP ID : 12A Description The MTN12N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn12n60e3.pdf

Spec. No. : C743E3 Issued Date : 2009.10.08 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS :660V @Tj=150C RDS(ON) : 0.65 MTN12N60E3 ID : 12A Description The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resist
mtn12n60bfp.pdf

Spec. No. : C164FP Issued Date : 2015.03.04 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS :600V RDS(ON) : 0.46 typ. MTN12N60BFP ID : 12A Description The MTN12N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
Другие MOSFET... MTN10N60E3 , MTN10N60FP , MTN10N65EA , MTN10N65FP , MTN10N65FPG , MTN10N70EA , MTN12N60E3 , MTN12N60FP , IRFB4115 , MTN1308E3 , MTN1322S3 , MTN138KS3 , MTN138ZN3 , MTN13N50E3 , MTN13N50FP , MTN14N60FP , MTN15N50E3 .
History: STL8N10LF3 | APT20M40HVR | MPSW65M046CFD | SFB044N100C3 | AP3990R-HF | 2SK664 | MMIS70H900QTH
History: STL8N10LF3 | APT20M40HVR | MPSW65M046CFD | SFB044N100C3 | AP3990R-HF | 2SK664 | MMIS70H900QTH



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