MTN138KS3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTN138KS3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 1.1 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: SOT-323

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MTN138KS3 Datasheet (PDF)

..1. Size:274K cystek
mtn138ks3.pdf

Spec. No. : C320S3 Issued Date : 2007.11.06 CYStech Electronics Corp.Revised Date : 2013.09.03 Page No. : 1/7 N-CHANNEL MOSFET MTN138KS3 Description The MTN138KS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-

8.1. Size:326K cystek
mtn138zn3.pdf

Spec. No. : C388N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date :2014.06.10 Page No. : 1/9 N-CHANNEL MOSFET MTN138ZN3 Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free package Symbol Outline MTN1

9.1. Size:508K cystek
mtn13n50e3.pdf

Spec. No. : C405E3 Issued Date : 2008.12.01 CYStech Electronics Corp.Revised Date : 2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.48 MTN13N50E3 ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resis

9.2. Size:203K cystek
mtn1308e3.pdf

Spec. No. : C440E3 Issued Date : 2009.02.23 CYStech Electronics Corp.Revised Date : Page No. : 1/6 N-Channel Enhancement Mode Power MOSFETBVDSS 75VRDSON 13 m MTN1308E3 ID 80ADescription The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effective

9.3. Size:338K cystek
mtn13n50fp.pdf

Spec. No. : C405FP Issued Date : 2008.12.01 CYStech Electronics Corp.Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.48 typ. MTN13N50FP ID : 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

9.4. Size:309K cystek
mtn1322s3.pdf

Spec. No. : C596S3 Issued Date : 2009.11.20 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 25VMTN1322S3 ID 850mARDSON@VGS=4.5V, ID=600mA 300m(typ) RDSON@VGS=2.5V,ID=400mA 450m(typ) RDSON@VGS=1.8V,ID=350mA 870m(typ) Features Simple drive requirement Small package outline Pb-free packag

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