MTN138KS3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN138KS3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: SOT-323

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MTN138KS3 datasheet

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 mtn138ks3.pdf pdf_icon

MTN138KS3

Spec. No. C320S3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2013.09.03 Page No. 1/7 N-CHANNEL MOSFET MTN138KS3 Description The MTN138KS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-

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 mtn138zn3.pdf pdf_icon

MTN138KS3

Spec. No. C388N3 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2014.06.10 Page No. 1/9 N-CHANNEL MOSFET MTN138ZN3 Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free package Symbol Outline MTN1

 9.1. Size:508K  cystek
 mtn13n50e3.pdf pdf_icon

MTN138KS3

Spec. No. C405E3 Issued Date 2008.12.01 CYStech Electronics Corp. Revised Date 2009.08.13 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 0.48 MTN13N50E3 ID 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resis

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 mtn1308e3.pdf pdf_icon

MTN138KS3

Spec. No. C440E3 Issued Date 2009.02.23 CYStech Electronics Corp. Revised Date Page No. 1/6 N-Channel Enhancement Mode Power MOSFET BVDSS 75V RDSON 13 m MTN1308E3 ID 80A Description The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effective

MOSTRAR MÁS

Otros transistores... MTN10N65FP, MTN10N65FPG, MTN10N70EA, MTN12N60E3, MTN12N60FP, MTN12N65FP, MTN1308E3, MTN1322S3, IRFP250N, MTN138ZN3, MTN13N50E3, MTN13N50FP, MTN14N60FP, MTN15N50E3, MTN15N50F3, MTN15N50FP, MTN1634V8