MTN2002ZS3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN2002ZS3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 0.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 7.7 pF
Resistencia entre drenaje y fuente RDS(on): 1.7 Ohm
Paquete / Cubierta: SOT-323
Búsqueda de reemplazo de MOSFET MTN2002ZS3
MTN2002ZS3 Datasheet (PDF)
mtn2002zs3.pdf
Spec. No. : C447S3 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTN2002ZS3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTN2002ZS3 SOT-323 D S
mtn2002zw3.pdf
Spec. No. : C447W3 Issued Date : 2010.07.26 CYStech Electronics Corp.Revised Date : Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTN2002ZW3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTN2002ZW3 SOT-923 D SG GGa
mtn20nf06j3.pdf
Spec. No. : C431J3 CYStech Electronics Corp. Issued Date : 2008.12.11 Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 60VMTN20NF06J3 ID 60ARDSON 10.6m(typ) Features Low Gate Charge Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Symbol Outline MTN
mtn20n20f3.pdf
Spec. No. : C801F3 Issued Date : 2010.05.18 CYStech Electronics Corp.Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 200V RDS(ON) : 90m (typ.) MTN20N20F3 ID : 20A Description The MTN20N20F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
