MTN20N20F3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN20N20F3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 210 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: TO-263

  📄📄 Copiar 

 Búsqueda de reemplazo de MTN20N20F3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

MTN20N20F3 datasheet

 ..1. Size:324K  cystek
 mtn20n20f3.pdf pdf_icon

MTN20N20F3

Spec. No. C801F3 Issued Date 2010.05.18 CYStech Electronics Corp. Revised Date Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 200V RDS(ON) 90m (typ.) MTN20N20F3 ID 20A Description The MTN20N20F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

 8.1. Size:357K  cystek
 mtn20nf06j3.pdf pdf_icon

MTN20N20F3

Spec. No. C431J3 CYStech Electronics Corp. Issued Date 2008.12.11 Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTN20NF06J3 ID 60A RDSON 10.6m (typ) Features Low Gate Charge Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Symbol Outline MTN

 9.1. Size:262K  cystek
 mtn2002zw3.pdf pdf_icon

MTN20N20F3

Spec. No. C447W3 Issued Date 2010.07.26 CYStech Electronics Corp. Revised Date Page No. 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mA MTN2002ZW3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTN2002ZW3 SOT-923 D S G G Ga

 9.2. Size:264K  cystek
 mtn2002zs3.pdf pdf_icon

MTN20N20F3

Spec. No. C447S3 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/7 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mA MTN2002ZS3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTN2002ZS3 SOT-323 D S

MOSTRAR MÁS

Otros transistores... MTN15N50F3, MTN15N50FP, MTN1634V8, MTN18N20FP, MTN1N60A3, MTN1N65I3, MTN2002ZS3, MTN2002ZW3, IRFP260, MTN20NF06J3, MTN22N20J3, MTN2300N3, MTN2302N3, MTN2302V3, MTN2304M3, MTN2304N3, MTN2306AM3