MTN2306AM3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN2306AM3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.4 nS

Cossⓘ - Capacitancia de salida: 57 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SOT-89

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MTN2306AM3 datasheet

 ..1. Size:299K  cystek
 mtn2306am3.pdf pdf_icon

MTN2306AM3

Spec. No. C414M3 Issued Date 2012.03.29 CYStech Electronics Corp. Revised Date 2014.07.01 Page No. 1/8 N-CHANNEL MOSFET BVDSS 30V ID 6.8A RDSON@VGS=10V, ID=5.8A 25m (typ) MTN2306AM3 RDSON@VGS=4.5V, ID=5A 27m (typ) Features Low on-resistance High speed switching Low-voltage drive Easily designed drive circuits Pb-free lead plating and h

 6.1. Size:310K  cystek
 mtn2306an3.pdf pdf_icon

MTN2306AM3

Spec. No. C429N3 Issued Date 2008.08.14 CYStech Electronics Corp. Revised Date 2012.03.29 Page No. 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2306AN3 ID 5.5A 25m VGS=10V, ID=5A 27m RDSON(TYP) VGS=4.5V, ID=5A 30m VGS=2.5V, ID=2.6A Features Low on-resistance Low gate charge Excellent thermal and electrical capabilities

 7.1. Size:283K  cystek
 mtn2306zn3.pdf pdf_icon

MTN2306AM3

Spec. No. C582N3 Issued Date 2011.08.30 CYStech Electronics Corp. Revised Date Page No. 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 20V MTN2306ZN3 ID 6A 28m VGS=10V, ID=5A 30m VGS=4.5V, ID=5A Features RDSON(MAX) V =20V 40m DS VGS=2.5V, ID=2.6A @V =4.5V, I =5A R =30m GS D DS(ON) 60m VGS=1.8V, ID=1A @V =2.5V, I =2.6

 7.2. Size:308K  cystek
 mtn2306n3.pdf pdf_icon

MTN2306AM3

Spec. No. C723N3 Issued Date 2012.04.12 CYStech Electronics Corp. Revised Date Page No. 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS 30V ID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTN2306N3 SOT

MOSTRAR MÁS

Otros transistores... MTN20N20F3, MTN20NF06J3, MTN22N20J3, MTN2300N3, MTN2302N3, MTN2302V3, MTN2304M3, MTN2304N3, IRFB3607, MTN2306AN3, MTN2306N3, MTN2306ZN3, MTN2310M3, MTN2310N3, MTN2310V8, MTN2328M3, MTN2328N3