All MOSFET. MTN2306AM3 Datasheet

 

MTN2306AM3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN2306AM3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.7 nC
   trⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT-89

 MTN2306AM3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN2306AM3 Datasheet (PDF)

 ..1. Size:299K  cystek
 mtn2306am3.pdf

MTN2306AM3 MTN2306AM3

Spec. No. : C414M3 Issued Date : 2012.03.29 CYStech Electronics Corp.Revised Date : 2014.07.01 Page No. : 1/8 N-CHANNEL MOSFET BVDSS 30VID 6.8ARDSON@VGS=10V, ID=5.8A 25m(typ) MTN2306AM3 RDSON@VGS=4.5V, ID=5A 27m(typ) Features Low on-resistance High speed switching Low-voltage drive Easily designed drive circuits Pb-free lead plating and h

 6.1. Size:310K  cystek
 mtn2306an3.pdf

MTN2306AM3 MTN2306AM3

Spec. No. : C429N3 Issued Date : 2008.08.14 CYStech Electronics Corp.Revised Date :2012.03.29 Page No. : 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2306AN3 ID 5.5A25m VGS=10V, ID=5A 27m RDSON(TYP) VGS=4.5V, ID=5A 30m VGS=2.5V, ID=2.6A Features Low on-resistance Low gate charge Excellent thermal and electrical capabilities

 7.1. Size:283K  cystek
 mtn2306zn3.pdf

MTN2306AM3 MTN2306AM3

Spec. No. : C582N3 Issued Date : 2011.08.30 CYStech Electronics Corp.Revised Date : Page No. : 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 20VMTN2306ZN3 ID 6A28m VGS=10V, ID=5A 30m VGS=4.5V, ID=5A Features RDSON(MAX) V =20V 40m DSVGS=2.5V, ID=2.6A@V =4.5V, I =5A R =30m GS DDS(ON)60m VGS=1.8V, ID=1A @V =2.5V, I =2.6

 7.2. Size:308K  cystek
 mtn2306n3.pdf

MTN2306AM3 MTN2306AM3

Spec. No. : C723N3 Issued Date : 2012.04.12 CYStech Electronics Corp.Revised Date : Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS 30VID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTN2306N3 SOT

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MTH6N55 | 24NM60G-T47-T | 4N80L-TN3-R | MTN3207F3 | FQD6N40CTF

 

 
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