MTN2N60I3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN2N60I3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm

Encapsulados: TO-251

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MTN2N60I3 datasheet

 ..1. Size:337K  cystek
 mtn2n60i3.pdf pdf_icon

MTN2N60I3

Spec. No. C435I3 Issued Date 2009.01.20 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 4.0 (typ.) MTN2N60I3 ID 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

 7.1. Size:357K  cystek
 mtn2n60j3.pdf pdf_icon

MTN2N60I3

Spec. No. C435J3 Issued Date 2009.01.20 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 4.0 (typ.) MTN2N60J3 ID 2A Description The MTN2N60J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res

 7.2. Size:284K  cystek
 mtn2n60fp.pdf pdf_icon

MTN2N60I3

Spec. No. C435FP Issued Date 2009.01.19 CYStech Electronics Corp. Revised Date 2011.03.30 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 4.1 typ. MTN2N60FP ID 2A Description The MTN2N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 8.1. Size:333K  cystek
 mtn2n65j3.pdf pdf_icon

MTN2N60I3

Spec. No. C722J3 Issued Date 2010.08.06 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDSON(typ) 6.2 MTN2N65J3 ID 1.8A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package

MOSTRAR MÁS

Otros transistores... MTN2510LE3, MTN2510LJ3, MTN2572F3, MTN2572FP, MTN2572H8, MTN2572J3, MTN2604G6, MTN2N60FP, IRF520, MTN2N60J3, MTN2N65AI3, MTN2N65FP, MTN2N65I3, MTN2N65J3, MTN2N70FP, MTN2N70I3, MTN3018S3