MTN2N70I3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN2N70I3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6.2 Ohm

Encapsulados: TO-251

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MTN2N70I3 datasheet

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 mtn2n70i3.pdf pdf_icon

MTN2N70I3

Spec. No. C722I3 Issued Date 2009.08.14 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 700V RDSON(typ) 6.2 MTN2N70I3 ID 1.8A Description The MTN2N70I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

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 mtn2n70fp.pdf pdf_icon

MTN2N70I3

Spec. No. C722FP Issued Date 2011.06.09 CYStech Electronics Corp. Revised Date Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 700V RDS(ON) 5.8 (typ.) MTN2N70FP ID 1.8A Description The MTN2N70FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 9.1. Size:333K  cystek
 mtn2n65j3.pdf pdf_icon

MTN2N70I3

Spec. No. C722J3 Issued Date 2010.08.06 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDSON(typ) 6.2 MTN2N65J3 ID 1.8A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package

 9.2. Size:336K  cystek
 mtn2n65i3.pdf pdf_icon

MTN2N70I3

Spec. No. C722I3 Issued Date 2009.08.14 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDSON(typ) 6.2 MTN2N65I3 ID 1.8A Description The MTN2N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

MOSTRAR MÁS

Otros transistores... MTN2N60FP, MTN2N60I3, MTN2N60J3, MTN2N65AI3, MTN2N65FP, MTN2N65I3, MTN2N65J3, MTN2N70FP, 75N75, MTN3018S3, MTN3023J3, MTN303KN3, MTN3055J3, MTN3055L3, MTN3055M3, MTN3205E3, MTN3207E3