MTN2N70I3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTN2N70I3
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 44 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 1.8 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 25 pf
Сопротивление сток-исток открытого транзистора (Rds): 6.2 Ohm
Тип корпуса: TO-251
MTN2N70I3 Datasheet (PDF)
mtn2n70i3.pdf
Spec. No. : C722I3 Issued Date : 2009.08.14 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V RDSON(typ): 6.2 MTN2N70I3 ID : 1.8A Description The MTN2N70I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi
mtn2n70fp.pdf
Spec. No. : C722FP Issued Date : 2011.06.09 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V RDS(ON) : 5.8 (typ.) MTN2N70FP ID : 1.8A Description The MTN2N70FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
mtn2n65j3.pdf
Spec. No. : C722J3 Issued Date : 2010.08.06 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ): 6.2 MTN2N65J3 ID : 1.8A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
mtn2n65i3.pdf
Spec. No. : C722I3 Issued Date : 2009.08.14 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ): 6.2 MTN2N65I3 ID : 1.8A Description The MTN2N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi
mtn2n60j3.pdf
Spec. No. : C435J3 Issued Date : 2009.01.20 CYStech Electronics Corp.Revised Date :2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.0(typ.) MTN2N60J3 ID : 2A Description The MTN2N60J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res
mtn2n60fp.pdf
Spec. No. : C435FP Issued Date : 2009.01.19 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.1 typ. MTN2N60FP ID : 2A Description The MTN2N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn2n60i3.pdf
Spec. No. : C435I3 Issued Date : 2009.01.20 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 4.0(typ.) MTN2N60I3 ID : 2A Description The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res
mtn2n65fp.pdf
Spec. No. : C722FP Issued Date : 2010.03.15 CYStech Electronics Corp.Revised Date :2012.11.08 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 5.8 (typ.) MTN2N65FP ID : 1.8A Description The MTN2N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
mtn2n65ai3.pdf
Spec. No. : C799I3 Issued Date : 2010.03.29 CYStech Electronics Corp.Revised Date :2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDSON(typ.) : 5.0 MTN2N65AI3 ID : 2A Description The MTN2N65AI3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-res
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