MTN303KN3 Todos los transistores

 

MTN303KN3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTN303KN3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 14 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SOT-23
 

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MTN303KN3 Datasheet (PDF)

 ..1. Size:307K  cystek
 mtn303kn3.pdf pdf_icon

MTN303KN3

Spec. No. : C814N3 Issued Date : 2012.05.15 CYStech Electronics Corp.Revised Date : 2012.08.27 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN303KN3 ID 850mARDSON@VGS=4.5V, ID=600mA 300m(typ) RDSON@VGS=2.5V,ID=400mA 450m(typ) RDSON@VGS=1.8V,ID=350mA 870m(typ) Features Simple drive requirement Small package outline Pb-free packag

 9.1. Size:563K  cystek
 mtn3055j3.pdf pdf_icon

MTN303KN3

Spec. No. : C390J3 Issued Date : 2007.06.12 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30VID 15AMTN3055J3 RDSON 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic RoHS compliant package Symbol Outline TO-252 MTN3055J3GGate G D S D

 9.2. Size:261K  cystek
 mtn3018s3.pdf pdf_icon

MTN303KN3

Spec. No. : C320S3-R Issued Date : 2007.11.29 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET MTN3018S3 Description The MTN3018S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel

 9.3. Size:349K  cystek
 mtn3055m3.pdf pdf_icon

MTN303KN3

Spec. No. : C390M3 Issued Date : 2007.09.19 CYStech Electronics Corp.Revised Date : 2009.12.03 Page No. : 1/6 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VID 6AMTN3055M3 RDSON(MAX) 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free package Symbol Outline MTN3055M3 SOT-89 D G D S GGate S

MOSTRAR MÁS

Otros transistores... MTN2N65AI3 , MTN2N65FP , MTN2N65I3 , MTN2N65J3 , MTN2N70FP , MTN2N70I3 , MTN3018S3 , MTN3023J3 , IRFZ48N , MTN3055J3 , MTN3055L3 , MTN3055M3 , MTN3205E3 , MTN3207E3 , MTN3207F3 , MTN3400N3 , MTN3410F3 .

History: AO4854 | NVBLS1D1N08H

 

 
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