MTN303KN3 Specs and Replacement
Type Designator: MTN303KN3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 14 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-23
MTN303KN3 substitution
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MTN303KN3 datasheet
mtn303kn3.pdf
Spec. No. C814N3 Issued Date 2012.05.15 CYStech Electronics Corp. Revised Date 2012.08.27 Page No. 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN303KN3 ID 850mA RDSON@VGS=4.5V, ID=600mA 300m (typ) RDSON@VGS=2.5V,ID=400mA 450m (typ) RDSON@VGS=1.8V,ID=350mA 870m (typ) Features Simple drive requirement Small package outline Pb-free packag... See More ⇒
mtn3055j3.pdf
Spec. No. C390J3 Issued Date 2007.06.12 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30V ID 15A MTN3055J3 RDSON 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic RoHS compliant package Symbol Outline TO-252 MTN3055J3 G Gate G D S D ... See More ⇒
Detailed specifications: MTN2N65AI3, MTN2N65FP, MTN2N65I3, MTN2N65J3, MTN2N70FP, MTN2N70I3, MTN3018S3, MTN3023J3, STP65NF06, MTN3055J3, MTN3055L3, MTN3055M3, MTN3205E3, MTN3207E3, MTN3207F3, MTN3400N3, MTN3410F3
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