MTN3410J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN3410J3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 200 nS

Cossⓘ - Capacitancia de salida: 275 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO-252

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MTN3410J3 datasheet

 ..1. Size:330K  cystek
mtn3410j3.pdf pdf_icon

MTN3410J3

Spec. No. C433J3 Issued Date 2008.12.24 CYStech Electronics Corp. Revised Date 2010.07.22 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100V ID 50A MTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410

 7.1. Size:289K  cystek
mtn3410f3.pdf pdf_icon

MTN3410J3

Spec. No. C795F3 Issued Date 2011.03.01 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V RDS(ON) 20m (max.) MTN3410F3 ID 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

 8.1. Size:280K  cystek
mtn3418cn3.pdf pdf_icon

MTN3410J3

Spec. No. C570N3 Issued Date 2012.02.03 CYStech Electronics Corp. Revised Date 2012.07.30 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.4A MTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri

 8.2. Size:274K  cystek
mtn3418s3.pdf pdf_icon

MTN3410J3

Spec. No. C726S3 Issued Date 2011.12.20 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.9A MTN3418S3 RDSON(max) 110m Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

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