MTN3434G6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN3434G6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.14 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm

Encapsulados: TSOP-6

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MTN3434G6 datasheet

 ..1. Size:556K  cystek
 mtn3434g6.pdf pdf_icon

MTN3434G6

Spec. No. C781G6 Issued Date 2011.06.10 CYStech Electronics Corp. Revised Date Page No. 1/6 BVDSS 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET ID 6.1A MTN3434G6 RDSON 34m Description The MTN3434G6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effective

 9.1. Size:426K  cystek
 mtn3400n3.pdf pdf_icon

MTN3434G6

Spec. No. C414N3 Issued Date 2007.07.05 CYStech Electronics Corp. Revised Date 2017.05.03 Page No. 1/ 9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN3400N3 ID@VGS=10V, TA=25 C 5.8A 20m VGS=10V, ID=5.8A 22m RDSON(TYP) VGS=4.5V, ID=5A 27m VGS=2.5V, ID=4A Features Low on-resistance Low gate charge Excellent thermal and electrical

 9.2. Size:280K  cystek
 mtn3418cn3.pdf pdf_icon

MTN3434G6

Spec. No. C570N3 Issued Date 2012.02.03 CYStech Electronics Corp. Revised Date 2012.07.30 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.4A MTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri

 9.3. Size:330K  cystek
 mtn3410j3.pdf pdf_icon

MTN3434G6

Spec. No. C433J3 Issued Date 2008.12.24 CYStech Electronics Corp. Revised Date 2010.07.22 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100V ID 50A MTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410

MOSTRAR MÁS

Otros transistores... MTN3207F3, MTN3400N3, MTN3410F3, MTN3410J3, MTN3418BN3, MTN3418CN3, MTN3418N3, MTN3418S3, AOD4184A, MTN3440N6, MTN3484J3, MTN3484V8, MTN351AN3, MTN35N03J3, MTN3607E3, MTN3607F3, MTN3820F3