MTN3434G6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTN3434G6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 45 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: TSOP-6

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MTN3434G6 Datasheet (PDF)

..1. Size:556K cystek
mtn3434g6.pdf

Spec. No. : C781G6 Issued Date : 2011.06.10 CYStech Electronics Corp.Revised Date : Page No. : 1/6 BVDSS 30VN-CHANNEL ENHANCEMENT MODE POWER MOSFET ID 6.1AMTN3434G6 RDSON 34m Description The MTN3434G6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effective

9.1. Size:426K cystek
mtn3400n3.pdf

Spec. No. : C414N3 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2017.05.03 Page No. : 1/ 9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN3400N3 ID@VGS=10V, TA=25C 5.8A 20m VGS=10V, ID=5.8A22m RDSON(TYP) VGS=4.5V, ID=5A 27m VGS=2.5V, ID=4A Features Low on-resistance Low gate charge Excellent thermal and electrical

9.2. Size:280K cystek
mtn3418cn3.pdf

Spec. No. : C570N3 Issued Date : 2012.02.03 CYStech Electronics Corp.Revised Date : 2012.07.30 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.4AMTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri

9.3. Size:330K cystek
mtn3410j3.pdf

Spec. No. : C433J3 Issued Date : 2008.12.24 CYStech Electronics Corp.Revised Date : 2010.07.22 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100VID 50AMTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410

9.4. Size:277K cystek
mtn3484j3.pdf

Spec. No. : C581J3 Issued Date : 2011.09.29 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTN3484J3 ID 16A125m VGS=10V, ID=8A RDSON(MAX) 140m VGS=4.5V, ID=8A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equival

9.5. Size:274K cystek
mtn3418s3.pdf

Spec. No. : C726S3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.9AMTN3418S3 RDSON(max) 110m Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

9.6. Size:322K cystek
mtn3484v8.pdf

Spec. No. : C581V8 Issued Date : 2012.03.15 CYStech Electronics Corp.Revised Date : 2012.03.26 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100VMTN3484V8 ID 3.5AVGS=10V, ID=3.5A 92m RDSON(TYP) VGS=4.5V, ID=3.5A 97m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outlin

9.7. Size:282K cystek
mtn3418bn3.pdf

Spec. No. : C580N3 Issued Date : 2011.09.16 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.7AMTN3418BN3 RDSON(max) 450m Description The MTN3418BN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Pb-free pac

9.8. Size:289K cystek
mtn3410f3.pdf

Spec. No. : C795F3 Issued Date : 2011.03.01 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 100V RDS(ON) : 20m (max.) MTN3410F3 ID : 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

9.9. Size:280K cystek
mtn3418n3.pdf

Spec. No. : C726N3 Issued Date : 2009.08.21 CYStech Electronics Corp.Revised Date : 2013.11.29 Page No. : 1/7 N-Channel MOSFET BVDSS 30VID 1.9AMTN3418N3 RDSON(max) 110m Description The MTN3418N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

9.10. Size:421K cystek
mtn3440n6.pdf

Spec. No. : C874N6 Issued Date : 2013.07.10 CYStech Electronics Corp.Revised Date : 2017.03.29 Page No. : 1/9 N-Channel Enhancement Mode MOSFET BVDSS 150VMTN3440N6 ID@VGS=10V, TA=25C 1.7A ID@VGS=10V, TA=70C 1.4A ID@VGS=10V, TC=25C 2.2A ID@VGS=10V, TC=70C 1.8A Features245m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 270m VGS=

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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