MTN3434G6 - описание и поиск аналогов

 ..1. Size:556K  cystek
 mtn3434g6.pdf 

Spec. No. C781G6 Issued Date 2011.06.10 CYStech Electronics Corp. Revised Date Page No. 1/6 BVDSS 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET ID 6.1A MTN3434G6 RDSON 34m Description The MTN3434G6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effective

 9.1. Size:426K  cystek
 mtn3400n3.pdf 

Spec. No. C414N3 Issued Date 2007.07.05 CYStech Electronics Corp. Revised Date 2017.05.03 Page No. 1/ 9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN3400N3 ID@VGS=10V, TA=25 C 5.8A 20m VGS=10V, ID=5.8A 22m RDSON(TYP) VGS=4.5V, ID=5A 27m VGS=2.5V, ID=4A Features Low on-resistance Low gate charge Excellent thermal and electrical

 9.2. Size:280K  cystek
 mtn3418cn3.pdf 

Spec. No. C570N3 Issued Date 2012.02.03 CYStech Electronics Corp. Revised Date 2012.07.30 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.4A MTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri

 9.3. Size:330K  cystek
 mtn3410j3.pdf 

Spec. No. C433J3 Issued Date 2008.12.24 CYStech Electronics Corp. Revised Date 2010.07.22 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100V ID 50A MTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410

 9.4. Size:277K  cystek
 mtn3484j3.pdf 

Spec. No. C581J3 Issued Date 2011.09.29 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTN3484J3 ID 16A 125m VGS=10V, ID=8A RDSON(MAX) 140m VGS=4.5V, ID=8A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equival

 9.5. Size:274K  cystek
 mtn3418s3.pdf 

Spec. No. C726S3 Issued Date 2011.12.20 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.9A MTN3418S3 RDSON(max) 110m Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

 9.6. Size:322K  cystek
 mtn3484v8.pdf 

Spec. No. C581V8 Issued Date 2012.03.15 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTN3484V8 ID 3.5A VGS=10V, ID=3.5A 92m RDSON(TYP) VGS=4.5V, ID=3.5A 97m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outlin

 9.7. Size:282K  cystek
 mtn3418bn3.pdf 

Spec. No. C580N3 Issued Date 2011.09.16 CYStech Electronics Corp. Revised Date Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.7A MTN3418BN3 RDSON(max) 450m Description The MTN3418BN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Pb-free pac

 9.8. Size:289K  cystek
 mtn3410f3.pdf 

Spec. No. C795F3 Issued Date 2011.03.01 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V RDS(ON) 20m (max.) MTN3410F3 ID 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

 9.9. Size:280K  cystek
 mtn3418n3.pdf 

Spec. No. C726N3 Issued Date 2009.08.21 CYStech Electronics Corp. Revised Date 2013.11.29 Page No. 1/7 N-Channel MOSFET BVDSS 30V ID 1.9A MTN3418N3 RDSON(max) 110m Description The MTN3418N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

 9.10. Size:421K  cystek
 mtn3440n6.pdf 

Spec. No. C874N6 Issued Date 2013.07.10 CYStech Electronics Corp. Revised Date 2017.03.29 Page No. 1/9 N-Channel Enhancement Mode MOSFET BVDSS 150V MTN3440N6 ID@VGS=10V, TA=25 C 1.7A ID@VGS=10V, TA=70 C 1.4A ID@VGS=10V, TC=25 C 2.2A ID@VGS=10V, TC=70 C 1.8A Features 245m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 270m VGS=