MTN3N60J3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN3N60J3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 58 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de MTN3N60J3 MOSFET
- Selecciónⓘ de transistores por parámetros
MTN3N60J3 datasheet
mtn3n60j3.pdf
Spec. No. C798J3 Issued Date 2010.08.12 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 3.6 (typ.) MTN3N60J3 ID 3A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and halogen-free package Applications
mtn3n60i3.pdf
Spec. No. C798I3 Issued Date 2010.08.12 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 3.6 (typ.) MTN3N60I3 ID 3A Description The MTN3N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn3n60fp.pdf
Spec. No. C798FP Issued Date 2010.03.12 CYStech Electronics Corp. Revised Date 2011.03.30 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 3.6 (typ.) MTN3N60FP ID 3A Description The MTN3N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
mtn3n65fp.pdf
Spec. No. C798FP Issued Date 2010.03.12 CYStech Electronics Corp. Revised Date 2011.03.30 Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.6 (typ.) MTN3N65FP ID 3A Description The MTN3N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
Otros transistores... MTN35N03J3, MTN3607E3, MTN3607F3, MTN3820F3, MTN3820J3, MTN3K01N3, MTN3N60FP, MTN3N60I3, 50N06, MTN3N65FP, MTN40N03I3, MTN40N03J3, MTN4402Q8, MTN4410Q8, MTN4410V8, MTN4424Q8, MTN4800V8
History: 2N7224U
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