MTN3N60J3 - параметры транзистора MOSFET, его аналоги, datasheet

MTN3N60J3 Datasheet (PDF)

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Spec. No. : C798J3 Issued Date : 2010.08.12 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 3.6 (typ.) MTN3N60J3 ID : 3A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and halogen-free package Applications

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Spec. No. : C798I3 Issued Date : 2010.08.12 CYStech Electronics Corp.Revised Date : 2011.11.10 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 3.6 (typ.) MTN3N60I3 ID : 3A Description The MTN3N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

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Spec. No. : C798FP Issued Date : 2010.03.12 CYStech Electronics Corp.Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 3.6 (typ.) MTN3N60FP ID : 3A Description The MTN3N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

8.1. Size:354K cystek
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Spec. No. : C798FP Issued Date : 2010.03.12 CYStech Electronics Corp.Revised Date : 2011.03.30 Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 3.6 (typ.) MTN3N65FP ID : 3A Description The MTN3N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

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