MTN4402Q8 Todos los transistores

 

MTN4402Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTN4402Q8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 356 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
   Paquete / Cubierta: SOP-8

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MTN4402Q8 Datasheet (PDF)

 ..1. Size:308K  cystek
mtn4402q8.pdf

MTN4402Q8
MTN4402Q8

Spec. No. : C910Q8 Issued Date : 2013.05.21 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 20VMTN4402Q8 ID 20A4.3m VGS=4.5V, ID=20A RDSON(TYP) 5.3m VGS=2.5V, ID=20A Description The MTN4402Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switc

 9.1. Size:312K  cystek
mtn4410v8.pdf

MTN4402Q8
MTN4402Q8

Spec. No. : C397V8 Issued Date : 2012.03.14 CYStech Electronics Corp.Revised Date : 2012.03.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN4410V8 Features Single Drive Requirement Low On-resistance Pb-free lead plating package Applications Synchronous rectifier for DC/DC converters Telecom secondary side rectification High end s

 9.2. Size:388K  cystek
mtn4424q8.pdf

MTN4402Q8
MTN4402Q8

Spec. No. : C382Q8 Issued Date : 2007.06.14 CYStech Electronics Corp.Revised Date : 2011.03.18 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTN4424Q8 Description The MTN4424Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

 9.3. Size:305K  cystek
mtn4410q8.pdf

MTN4402Q8
MTN4402Q8

Spec. No. : C397Q8 Issued Date : 2007.06.14 CYStech Electronics Corp.Revised Date : 2014.01.23 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN4410Q8 Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and halogen-free package Symbol O

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History: IRFU025 | KQB6N70

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