MTN4N60FP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN4N60FP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.9 nS
Cossⓘ - Capacitancia de salida: 86 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm
Encapsulados: TO-220FP
Búsqueda de reemplazo de MTN4N60FP MOSFET
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MTN4N60FP datasheet
mtn4n60fp.pdf
Spec. No. C408FP Issued Date 2008.09.02 CYStech Electronics Corp. Revised Date 2012.11.20 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60FP ID 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn4n60e3.pdf
Spec. No. C408E3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60E3 ID 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
mtn4n60j3.pdf
Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60J3 ID 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications
mtn4n60afp.pdf
Spec. No. C408FP-B Issued Date 2010.03.15 CYStech Electronics Corp. Revised Date 2011.03.29 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) typ 2.8 MTN4N60AFP ID 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
Otros transistores... MTN4410Q8, MTN4410V8, MTN4424Q8, MTN4800V8, MTN4N01Q8, MTN4N60AE3, MTN4N60AFP, MTN4N60E3, AON6414A, MTN4N60I3, MTN4N60J3, MTN4N65FP, MTN4N65I3, MTN4N65J3, MTN4N70I3, MTN50N06E3, MTN540J3
History: SPB04N50C3
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