MTN4N70I3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN4N70I3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 51 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de MTN4N70I3 MOSFET
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MTN4N70I3 datasheet
mtn4n70i3.pdf
Spec. No. C797I3 Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 700V RDS(ON) 3.0 (typ.) MTN4N70I3 ID 4A Description The MTN4N70I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
mtn4n65f3.pdf
Spec. No. C797F3 Issued Date 2015.03.06 CYStech Electronics Corp. Revised Date Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65F3 ID 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter
mtn4n01q8.pdf
Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 20V RDSON(MAX) 30m MTN4N01Q8 ID 6A Description The MTN4N01Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
mtn4n65fp.pdf
Spec. No. C797FP Issued Date 2010.06.09 CYStech Electronics Corp. Revised Date 2014.07.28 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65FP ID 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
Otros transistores... MTN4N60AFP, MTN4N60E3, MTN4N60FP, MTN4N60I3, MTN4N60J3, MTN4N65FP, MTN4N65I3, MTN4N65J3, IRFP250N, MTN50N06E3, MTN540J3, MTN5N50E3, MTN5N50FP, MTN5N50I3, MTN5N50J3, MTN5N60E3, MTN5N60FP
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