MTN4N70I3 Specs and Replacement
Type Designator: MTN4N70I3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ -
Output Capacitance: 51 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-251
- MOSFET ⓘ Cross-Reference Search
MTN4N70I3 datasheet
..1. Size:330K cystek
mtn4n70i3.pdf 
Spec. No. C797I3 Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 700V RDS(ON) 3.0 (typ.) MTN4N70I3 ID 4A Description The MTN4N70I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒
9.1. Size:393K cystek
mtn4n65f3.pdf 
Spec. No. C797F3 Issued Date 2015.03.06 CYStech Electronics Corp. Revised Date Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65F3 ID 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter ... See More ⇒
9.2. Size:617K cystek
mtn4n01q8.pdf 
Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 20V RDSON(MAX) 30m MTN4N01Q8 ID 6A Description The MTN4N01Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and... See More ⇒
9.3. Size:504K cystek
mtn4n65fp.pdf 
Spec. No. C797FP Issued Date 2010.06.09 CYStech Electronics Corp. Revised Date 2014.07.28 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65FP ID 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-... See More ⇒
9.4. Size:332K cystek
mtn4n65i3.pdf 
Spec. No. C797I3 Issued Date 2010.03.29 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.0 (typ.) MTN4N65I3 ID 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒
9.5. Size:286K cystek
mtn4n60fp.pdf 
Spec. No. C408FP Issued Date 2008.09.02 CYStech Electronics Corp. Revised Date 2012.11.20 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60FP ID 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒
9.6. Size:320K cystek
mtn4n60e3.pdf 
Spec. No. C408E3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60E3 ID 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and... See More ⇒
9.7. Size:357K cystek
mtn4n60j3.pdf 
Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60J3 ID 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating package Applications ... See More ⇒
9.8. Size:327K cystek
mtn4n65j3.pdf 
Spec. No. C797J3 Issued Date 2011.09.14 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.0 (typ.) MTN4N65J3 ID 4A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package... See More ⇒
9.9. Size:315K cystek
mtn4n60afp.pdf 
Spec. No. C408FP-B Issued Date 2010.03.15 CYStech Electronics Corp. Revised Date 2011.03.29 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) typ 2.8 MTN4N60AFP ID 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r... See More ⇒
9.10. Size:239K cystek
mtn4n60ae3.pdf 
Spec. No. C408E3-A Issued Date 2011.01.19 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60AE3 ID 4A Description The MTN4N60AE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒
9.11. Size:339K cystek
mtn4n60i3.pdf 
Spec. No. C408I3 Issued Date 2010.01.04 CYStech Electronics Corp. Revised Date 2013.10.18 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60I3 ID 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒
Detailed specifications: MTN4N60AFP, MTN4N60E3, MTN4N60FP, MTN4N60I3, MTN4N60J3, MTN4N65FP, MTN4N65I3, MTN4N65J3, IRFP250N, MTN50N06E3, MTN540J3, MTN5N50E3, MTN5N50FP, MTN5N50I3, MTN5N50J3, MTN5N60E3, MTN5N60FP
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