MTN5N50FP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN5N50FP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 74 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: TO-220FP

 Búsqueda de reemplazo de MTN5N50FP MOSFET

- Selecciónⓘ de transistores por parámetros

 

MTN5N50FP datasheet

 ..1. Size:357K  cystek
mtn5n50fp.pdf pdf_icon

MTN5N50FP

Spec. No. C740FP Issued Date 2011.04.12 CYStech Electronics Corp. Revised Date 2012.01.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) max. 1.6 MTN5N50FP ID 4.5A Description The MTN5N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 7.1. Size:327K  cystek
mtn5n50j3.pdf pdf_icon

MTN5N50FP

Spec. No. C740J3 Issued Date 2010.06.30 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) max. 1.6 MTN5N50J3 ID 4.5A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications

 7.2. Size:329K  cystek
mtn5n50i3.pdf pdf_icon

MTN5N50FP

Spec. No. C740I3 Issued Date 2010.06.24 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) max. 1.6 MTN5N50I3 ID 4.5A Description The MTN5N50I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 7.3. Size:299K  cystek
mtn5n50e3.pdf pdf_icon

MTN5N50FP

Spec. No. C740E3 Issued Date 2009.09.14 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 1.5 MTN5N50E3 ID 4.5A Description The MTN5N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

Otros transistores... MTN4N60J3, MTN4N65FP, MTN4N65I3, MTN4N65J3, MTN4N70I3, MTN50N06E3, MTN540J3, MTN5N50E3, 2SK3878, MTN5N50I3, MTN5N50J3, MTN5N60E3, MTN5N60FP, MTN5N60I3, MTN5N60J3, MTN5N65FP, MTN60NF06LJ3