MTN5N50I3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTN5N50I3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 74 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: TO-251

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MTN5N50I3 datasheet

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 mtn5n50i3.pdf pdf_icon

MTN5N50I3

Spec. No. C740I3 Issued Date 2010.06.24 CYStech Electronics Corp. Revised Date 2011.11.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) max. 1.6 MTN5N50I3 ID 4.5A Description The MTN5N50I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

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 mtn5n50fp.pdf pdf_icon

MTN5N50I3

Spec. No. C740FP Issued Date 2011.04.12 CYStech Electronics Corp. Revised Date 2012.01.10 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) max. 1.6 MTN5N50FP ID 4.5A Description The MTN5N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 7.2. Size:327K  cystek
 mtn5n50j3.pdf pdf_icon

MTN5N50I3

Spec. No. C740J3 Issued Date 2010.06.30 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) max. 1.6 MTN5N50J3 ID 4.5A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications

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 mtn5n50e3.pdf pdf_icon

MTN5N50I3

Spec. No. C740E3 Issued Date 2009.09.14 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 1.5 MTN5N50E3 ID 4.5A Description The MTN5N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

MOSTRAR MÁS

Otros transistores... MTN4N65FP, MTN4N65I3, MTN4N65J3, MTN4N70I3, MTN50N06E3, MTN540J3, MTN5N50E3, MTN5N50FP, STP75NF75, MTN5N50J3, MTN5N60E3, MTN5N60FP, MTN5N60I3, MTN5N60J3, MTN5N65FP, MTN60NF06LJ3, MTN6515E3