MTP1406M3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP1406M3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.67 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 665 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm

Encapsulados: SOT-89

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MTP1406M3 datasheet

 ..1. Size:238K  cystek
 mtp1406m3.pdf pdf_icon

MTP1406M3

Spec. No. C733M3 Issued Date 2011.05.16 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/5 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -60V MTP1406M3 ID -4A 90.8m RDSON(MAX) Features Single Drive Requirement Low On-resistance, RDS(ON)=90.8m @VGS=-10V, ID=-4A Ultra High Speed Switching Pb-free lead plated package Symbol

 7.1. Size:328K  cystek
 mtp1406j3.pdf pdf_icon

MTP1406M3

Spec. No. C733J3 Issued Date 2011.05.25 CYStech Electronics Corp. Revised Date Page No. 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTP1406J3 ID -10A 90.8m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTP1406J3 TO-252AB TO-252AA G D S G D S G

 7.2. Size:560K  cystek
 mtp1406l3.pdf pdf_icon

MTP1406M3

Spec. No. C733L3 Issued Date 2012.02.14 CYStech Electronics Corp. Revised Date 2014.07.25 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP1406L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) 99m (typ.) RDSON@VGS=-4.5V, ID=-2A Features Simple Drive Requirement Low On-resistance Fast

 9.1. Size:242K  motorola
 mtp14n10e.pdf pdf_icon

MTP1406M3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP14N10E/D Advance Information MTP14N10E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. The new energy 100 VOLTS efficient design also offers a drain

MOSTRAR MÁS

Otros transistores... MTNN8451KQ8, MTNN8452KQ8, MTNN8453KQ8, MTP1013C3, MTP1013S3, MTP1067C6, MTP1406J3, MTP1406L3, 60N06, MTP162M3, MTP2010J3, MTP2071M3, MTP2301N3, MTP2301S3, MTP2303N3, MTP2305N3, MTP2311M3