MTP1406M3 Datasheet and Replacement

Spec. No. : C733M3 Issued Date : 2011.05.16 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/5 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -60VMTP1406M3 ID -4A90.8m RDSON(MAX) Features Single Drive Requirement Low On-resistance, RDS(ON)=90.8m@VGS=-10V, ID=-4A Ultra High Speed Switching Pb-free lead plated package Symbol

Spec. No. : C733J3 Issued Date : 2011.05.25 CYStech Electronics Corp.Revised Date : Page No. : 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTP1406J3 ID -10A90.8m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTP1406J3TO-252AB TO-252AA G D S G D S G

Spec. No. : C733L3 Issued Date : 2012.02.14 CYStech Electronics Corp. Revised Date : 2014.07.25 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP1406L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) 99m (typ.) RDSON@VGS=-4.5V, ID=-2A Features Simple Drive Requirement Low On-resistance Fast

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP14N10E/DAdvance InformationMTP14N10ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high14 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSefficient design also offers a drain