MTP2010J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP2010J3
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 91 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.086 Ohm
Paquete / Cubierta: TO-252
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MTP2010J3 Datasheet (PDF)
mtp2010j3.pdf
Spec. No. : C732J3 Issued Date : 2011.11.10 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100VMTP2010J3 ID -20A95m @ VGS=-10V, ID=-10A RDSON(MAX) 105m@ VGS=-4.5V, ID=-10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package E
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mtp20n15eg.pdf
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Spec. No. : C417M3 Issued Date : 2012.02.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 20V P-CHANNEL Enhancement Mode MOSFET MTP2071M3 BVDSS -20VID -5A52m (typ.)RDSON@VGS=-4.5V, ID=-4.2A 66m (typ.)RDSON@VGS=-2.5V, ID=-2A 80m (typ.)RDSON@VGS=-1.8V, ID=-1A Features Single Drive Requirement Ultra High Speed Switching Pb-fr
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