MTP2071M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTP2071M3
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 8 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SOT-89

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MTP2071M3 Datasheet (PDF)

..1. Size:283K cystek
mtp2071m3.pdf

Spec. No. : C417M3 Issued Date : 2012.02.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 20V P-CHANNEL Enhancement Mode MOSFET MTP2071M3 BVDSS -20VID -5A52m (typ.)RDSON@VGS=-4.5V, ID=-4.2A 66m (typ.)RDSON@VGS=-2.5V, ID=-2A 80m (typ.)RDSON@VGS=-1.8V, ID=-1A Features Single Drive Requirement Ultra High Speed Switching Pb-fr

9.1. Size:209K motorola
mtp20n06v.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N06V/DDesigner's Data SheetMTP20N06VTMOS VPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-20 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than

9.2. Size:120K motorola
mtp20n20e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N20E/DDesigner's Data SheetMTP20N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high20 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffi

9.3. Size:203K motorola
mtp20n20erev2x.pdf

9.4. Size:56K motorola
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

9.5. Size:95K njs
mtp20n10e.pdf

9.6. Size:113K onsemi
mtp20n15e-d.pdf

MTP20N15EPower MOSFET20 Amps, 150 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power converters20 AMPERESand PWM motor controls, these dev

9.7. Size:110K onsemi
mtp20n15eg.pdf

9.8. Size:280K cystek
mtp2010j3.pdf

Spec. No. : C732J3 Issued Date : 2011.11.10 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -100VMTP2010J3 ID -20A95m @ VGS=-10V, ID=-10A RDSON(MAX) 105m@ VGS=-4.5V, ID=-10A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package E

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