MTP2071M3 Specs and Replacement

Type Designator: MTP2071M3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SOT-89

MTP2071M3 substitution

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MTP2071M3 datasheet

 ..1. Size:283K  cystek
mtp2071m3.pdf pdf_icon

MTP2071M3

Spec. No. C417M3 Issued Date 2012.02.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 20V P-CHANNEL Enhancement Mode MOSFET MTP2071M3 BVDSS -20V ID -5A 52m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 66m (typ.) RDSON@VGS=-2.5V, ID=-2A 80m (typ.) RDSON@VGS=-1.8V, ID=-1A Features Single Drive Requirement Ultra High Speed Switching Pb-fr... See More ⇒

 9.1. Size:209K  motorola
mtp20n06v.pdf pdf_icon

MTP2071M3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N06V/D Designer's Data Sheet MTP20N06V TMOS V Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 20 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than ... See More ⇒

 9.2. Size:120K  motorola
mtp20n20e.pdf pdf_icon

MTP2071M3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N20E/D Designer's Data Sheet MTP20N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 20 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effi... See More ⇒

 9.3. Size:203K  motorola
mtp20n20erev2x.pdf pdf_icon

MTP2071M3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N20E/D Designer's Data Sheet MTP20N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 20 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effi... See More ⇒

Detailed specifications: MTP1013C3, MTP1013S3, MTP1067C6, MTP1406J3, MTP1406L3, MTP1406M3, MTP162M3, MTP2010J3, IRF730, MTP2301N3, MTP2301S3, MTP2303N3, MTP2305N3, MTP2311M3, MTP2311N3, MTP2311V8, MTP2317N3

Keywords - MTP2071M3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.