MTP3415KN3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTP3415KN3 Datasheet (PDF)

..1. Size:293K cystek
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Spec. No. : C589N3 Issued Date : 2010.11.09 CYStech Electronics Corp.Revised Date : 2014.07.11 Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20VID -4.4AVGS=-4.5V, ID=-4A MTP3415KN3 33m VGS=-2.5V, ID=-4A 42m RDSON(TYP) VGS=-1.8V, ID=-2A 52m Features ESD protected 3KVAdvanced trench process technology High density cell design for ultra lo

8.1. Size:353K cystek
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Spec. No. : C394N3 Issued Date : 2012.01.19 CYStech Electronics Corp.Revised Date : 2014.03.04 Page No. : 1/9 P-Channel Logic Level Enhancement Mode MOSFET BVDSS -20VMTP3413N3 ID -4.9AVGS=-4.5V, ID=-4.3A 39m VGS=-2.5V, ID=-2.5ARDSON(TYP) 50m VGS=-1.8V, ID=-2A 65m Features 1.8V gate rated Advanced trench process technology High density cell desig

9.1. Size:340K cystek
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Spec. No. : C422N3 Issued Date : 2007.10.16 CYStech Electronics Corp.Revised Date : 2013.10.24 Page No. : 1/8 P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP3403N3 ID -3.7ARDSON@VGS=-10V, ID=-3A 52m(typ)RDSON@VGS=-4.5V,ID=-2.6A 76m(typ)Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High densit

9.2. Size:392K cystek
mtp3403an3.pdf pdf_icon

Spec. No. : C387N3 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.11.29 Page No. : 1/7 P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features V =-30V DS@V =-4.5V, I =-2A R =85m GS DSDS(ON)@V =-2.5V, I =-1A R =120m GS DSDS(ON) Advanced trench process technology High density cell design for ultra low on resistance Low