FSL9110R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FSL9110R
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
Encapsulados: TO205AF
Búsqueda de reemplazo de FSL9110R MOSFET
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FSL9110R datasheet
fsl9110.pdf
FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Features Resistant, P-Channel Power MOSFETs 2.5A, -100V, rDS(ON) = 1.30 The Discrete Products Operation of Intersil has developed a Total Dose series of Radiation Hardened MOSFETs specifically - Meets Pre-RAD Specifications to 100K RAD (Si) designed for commercial and military
fsl913ao.pdf
FSL913AOD, S E M I C O N D U C T O R FSL913AOR Radiation Hardened, September 1997 SEGR Resistant P-Channel Power MOSFETs Features Description 7A, -100V, rDS(ON) = 0.300 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MO
fsl9130.pdf
FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 5A, -100V, rDS(ON) = 0.680 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA
Otros transistores... FSL234R, FSL23A4D, FSL23A4R, FSL23AOD, FSL23AOR, FSL430D, FSL430R, FSL9110D, IRF9540N, FSL9130D, FSL9130R, FSL913AOD, FSL913AOR, FSL9230D, FSL9230R, FSL923AOD, FSL923AOR
History: VS3640AE
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