FSL9110R Datasheet and Replacement
Type Designator: FSL9110R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO205AF
FSL9110R substitution
FSL9110R Datasheet (PDF)
fsl9110.pdf

FSL9110D, FSL9110RData Sheet October 1998 File Number 4225.32.5A, -100V, 1.30 Ohm, Rad Hard, SEGR FeaturesResistant, P-Channel Power MOSFETs 2.5A, -100V, rDS(ON) = 1.30The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military
fsl913ao.pdf

FSL913AOD,S E M I C O N D U C T O RFSL913AORRadiation Hardened,September 1997 SEGR Resistant P-Channel Power MOSFETsFeatures Description 7A, -100V, rDS(ON) = 0.300 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MO
fsl9130.pdf

FSL9130D,FSL9130R5A, -100V, 0.680 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 5A, -100V, rDS(ON) = 0.680 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA
Datasheet: FSL234R , FSL23A4D , FSL23A4R , FSL23AOD , FSL23AOR , FSL430D , FSL430R , FSL9110D , IRF4905 , FSL9130D , FSL9130R , FSL913AOD , FSL913AOR , FSL9230D , FSL9230R , FSL923AOD , FSL923AOR .
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