MTP4413Q8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTP4413Q8
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SOP-8

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MTP4413Q8 Datasheet (PDF)

..1. Size:501K cystek
mtp4413q8.pdf

Spec. No. : C398Q8 Issued Date : 2007.10.12 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4413Q8 Description The MTP4413Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

8.1. Size:287K cystek
mtp4411q8.pdf

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2011.12.07 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4411Q8 ID -5.3ARDSON@VGS=-10V, ID=-5.3A 35m(typ)RDSON@VGS=-4.5V,ID=-4.2A 56m(typ)Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

8.2. Size:455K cystek
mtp4411aq8.pdf

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp. Revised Date : 2016.03.30 Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30VMTP4411AQ8 ID@VGS=-10V, TA=25C -5.3A RDSON@VGS=-10V, ID=-5.3A 30m(typ)RDSON@VGS=-4.5V,ID=-4.2A 43m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead

8.3. Size:281K cystek
mtp4411m3.pdf

Spec. No. : C400M3 CYStech Electronics Corp. Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8 -30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP4411M3 ID -5A40m (typ.)RDSON@VGS=-10V, ID=-4A 58m (typ.)RDSON@VGS=-4.5V, ID=-3A Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package Symbol Outline

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