MTP4413Q8 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP4413Q8  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOP-8

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MTP4413Q8 datasheet

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MTP4413Q8

Spec. No. C398Q8 Issued Date 2007.10.12 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4413Q8 Description The MTP4413Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

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 mtp4411q8.pdf pdf_icon

MTP4413Q8

Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2011.12.07 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4411Q8 ID -5.3A RDSON@VGS=-10V, ID=-5.3A 35m (typ) RDSON@VGS=-4.5V,ID=-4.2A 56m (typ) Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

 8.2. Size:455K  cystek
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MTP4413Q8

Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2016.03.30 Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP4411AQ8 ID@VGS=-10V, TA=25 C -5.3A RDSON@VGS=-10V, ID=-5.3A 30m (typ) RDSON@VGS=-4.5V,ID=-4.2A 43m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead

 8.3. Size:281K  cystek
 mtp4411m3.pdf pdf_icon

MTP4413Q8

Spec. No. C400M3 CYStech Electronics Corp. Issued Date 2011.10.06 Revised Date 2013.08.07 Page No. 1/8 -30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP4411M3 ID -5A 40m (typ.) RDSON@VGS=-10V, ID=-4A 58m (typ.) RDSON@VGS=-4.5V, ID=-3A Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package Symbol Outline

MOSTRAR MÁS

Otros transistores... MTP4151N3, MTP4403Q8, MTP4403SQ8, MTP4409H8, MTP4409Q8, MTP4411AQ8, MTP4411M3, MTP4411Q8, 2SK3568, MTP4423Q8, MTP4435V8, MTP4463Q8, MTP452L3, MTP452M3, MTP4835AQ8, MTP4835L3, MTP4835Q8