All MOSFET. MTP4413Q8 Datasheet

 

MTP4413Q8 Datasheet and Replacement


   Type Designator: MTP4413Q8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP-8
 

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MTP4413Q8 Datasheet (PDF)

 ..1. Size:501K  cystek
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MTP4413Q8

Spec. No. : C398Q8 Issued Date : 2007.10.12 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4413Q8 Description The MTP4413Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

 8.1. Size:287K  cystek
mtp4411q8.pdf pdf_icon

MTP4413Q8

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2011.12.07 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4411Q8 ID -5.3ARDSON@VGS=-10V, ID=-5.3A 35m(typ)RDSON@VGS=-4.5V,ID=-4.2A 56m(typ)Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

 8.2. Size:455K  cystek
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MTP4413Q8

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp. Revised Date : 2016.03.30 Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30VMTP4411AQ8 ID@VGS=-10V, TA=25C -5.3A RDSON@VGS=-10V, ID=-5.3A 30m(typ)RDSON@VGS=-4.5V,ID=-4.2A 43m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead

 8.3. Size:281K  cystek
mtp4411m3.pdf pdf_icon

MTP4413Q8

Spec. No. : C400M3 CYStech Electronics Corp. Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8 -30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP4411M3 ID -5A40m (typ.)RDSON@VGS=-10V, ID=-4A 58m (typ.)RDSON@VGS=-4.5V, ID=-3A Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package Symbol Outline

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - MTP4413Q8 MOSFET datasheet

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