MTP4423Q8 Todos los transistores

Spec. No. C423Q8 Issued Date 2007.11.15 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4423Q8 Description The MTP4423Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTP4403SQ8 RDSON(MAX) 46m ID -6.1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan

Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2011.12.07 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4411Q8 ID -5.3A RDSON@VGS=-10V, ID=-5.3A 35m (typ) RDSON@VGS=-4.5V,ID=-4.2A 56m (typ) Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

Spec. No. C398Q8 Issued Date 2007.10.12 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4413Q8 Description The MTP4413Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

Spec. No. C391V8 Issued Date 2012.09.28 CYStech Electronics Corp. Revised Date Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4435V8 ID -40A 10.3m (typ.) RDSON(MAX)@VGS=-10V, ID=-10A 15m (typ.) RDSON(MAX)@VGS=-5V, ID=-7A Description The MTP4435V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

Spec. No. C913Q8 Issued Date 2013.06.18 CYStech Electronics Corp. Revised Date 2014.05.21 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -20V MTP4463Q8 ID -14A RDSON@VGS=-4.5V, ID=-14A 8.8m (typ) RDSON@VGS=-2.5V, ID=-10A 12.8m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free

Spec. No. C107Q8 Issued Date 2015.08.14 CYStech Electronics Corp. Revised Date 2015.12.15 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP4435AQ8 ID@ VGS=-10V, TA=25 C -12.3A 12.3m (typ.) RDSON @VGS=-10V, ID=-8A 17.5m (typ.) RDSON @VGS=-4.5V, ID=-5A Features Simple drive requirement Low on-resistance Fast switching speed

Spec. No. C808H8 Issued Date 2013.09.02 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTP4409H8 ID -15A 7.3m VGS=-10V, ID=-15A RDSON(TYP) 11m VGS=-4.5V, ID=-10A Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swi

Spec. No. C791Q8 Issued Date 2010.07.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4403Q8 RDSON(MAX) 50m ID -6.1A Description The MTP4403Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2016.03.30 Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP4411AQ8 ID@VGS=-10V, TA=25 C -5.3A RDSON@VGS=-10V, ID=-5.3A 30m (typ) RDSON@VGS=-4.5V,ID=-4.2A 43m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead

Spec. No. C808Q8 Issued Date 2012.04.03 CYStech Electronics Corp. Revised Date 2014.05.16 Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4409Q8 ID -15A RDSON@VGS=-10V, ID=-15A 7.7m (typ) RDSON@VGS=-4.5V, ID=-10A 11.4m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free

Spec. No. C400M3 CYStech Electronics Corp. Issued Date 2011.10.06 Revised Date 2013.08.07 Page No. 1/8 -30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP4411M3 ID -5A 40m (typ.) RDSON@VGS=-10V, ID=-4A 58m (typ.) RDSON@VGS=-4.5V, ID=-3A Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package Symbol Outline

JMTP440P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Applications -40V, -6A Load Switch RDS(ON)

JMTP4407B Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -30V, I = -11A PWM Applications DS D R

JMTP4406A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 13A Load Switch RDS(ON)

JMTP4435A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -10A Load Switch RDS(ON)

JMTP4407A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -12A Load Switch RDS(ON)