MTP4423Q8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTP4423Q8
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 27 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 530 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
Тип корпуса: SOP-8
MTP4423Q8 Datasheet (PDF)
mtp4423q8.pdf
Spec. No. : C423Q8 Issued Date : 2007.11.15 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4423Q8 Description The MTP4423Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack
mtp4403sq8.pdf
Spec. No. : C804Q8 Issued Date : 2009.12.16 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20VMTP4403SQ8 RDSON(MAX) 46m ID -6.1ADescription The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan
mtp4411q8.pdf
Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2011.12.07 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4411Q8 ID -5.3ARDSON@VGS=-10V, ID=-5.3A 35m(typ)RDSON@VGS=-4.5V,ID=-4.2A 56m(typ)Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast
mtp4413q8.pdf
Spec. No. : C398Q8 Issued Date : 2007.10.12 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4413Q8 Description The MTP4413Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack
mtp4435v8.pdf
Spec. No. : C391V8 Issued Date : 2012.09.28 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4435V8 ID -40A10.3m(typ.) RDSON(MAX)@VGS=-10V, ID=-10A 15m(typ.) RDSON(MAX)@VGS=-5V, ID=-7A Description The MTP4435V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of
mtp4463q8.pdf
Spec. No. : C913Q8 Issued Date : 2013.06.18 CYStech Electronics Corp.Revised Date : 2014.05.21 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -20V MTP4463Q8 ID -14A RDSON@VGS=-4.5V, ID=-14A 8.8m(typ) RDSON@VGS=-2.5V, ID=-10A 12.8m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free
mtp4435aq8.pdf
Spec. No. : C107Q8 Issued Date : 2015.08.14 CYStech Electronics Corp. Revised Date : 2015.12.15 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTP4435AQ8 ID@ VGS=-10V, TA=25C -12.3A 12.3m(typ.) RDSON @VGS=-10V, ID=-8A 17.5m(typ.) RDSON @VGS=-4.5V, ID=-5A Features Simple drive requirement Low on-resistance Fast switching speed
mtp4409h8.pdf
Spec. No. : C808H8 Issued Date : 2013.09.02 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30VMTP4409H8ID -15A7.3m VGS=-10V, ID=-15A RDSON(TYP) 11m VGS=-4.5V, ID=-10A Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swi
mtp4403q8.pdf
Spec. No. : C791Q8 Issued Date : 2010.07.16 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4403Q8 RDSON(MAX) 50m ID -6.1ADescription The MTP4403Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
mtp4411aq8.pdf
Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp. Revised Date : 2016.03.30 Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30VMTP4411AQ8 ID@VGS=-10V, TA=25C -5.3A RDSON@VGS=-10V, ID=-5.3A 30m(typ)RDSON@VGS=-4.5V,ID=-4.2A 43m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead
mtp4409q8.pdf
Spec. No. : C808Q8 Issued Date : 2012.04.03 CYStech Electronics Corp.Revised Date : 2014.05.16 Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4409Q8 ID -15A RDSON@VGS=-10V, ID=-15A 7.7m(typ) RDSON@VGS=-4.5V, ID=-10A 11.4m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free
mtp4411m3.pdf
Spec. No. : C400M3 CYStech Electronics Corp. Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8 -30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP4411M3 ID -5A40m (typ.)RDSON@VGS=-10V, ID=-4A 58m (typ.)RDSON@VGS=-4.5V, ID=-3A Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package Symbol Outline
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History: STB33N60M2 | WMM18N70EM
