FSL913AOD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FSL913AOD
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: TO205AF
Búsqueda de reemplazo de FSL913AOD MOSFET
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FSL913AOD datasheet
fsl913ao.pdf
FSL913AOD, S E M I C O N D U C T O R FSL913AOR Radiation Hardened, September 1997 SEGR Resistant P-Channel Power MOSFETs Features Description 7A, -100V, rDS(ON) = 0.300 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MO
fsl9130.pdf
FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 5A, -100V, rDS(ON) = 0.680 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA
fsl9110.pdf
FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Features Resistant, P-Channel Power MOSFETs 2.5A, -100V, rDS(ON) = 1.30 The Discrete Products Operation of Intersil has developed a Total Dose series of Radiation Hardened MOSFETs specifically - Meets Pre-RAD Specifications to 100K RAD (Si) designed for commercial and military
Otros transistores... FSL23AOD, FSL23AOR, FSL430D, FSL430R, FSL9110D, FSL9110R, FSL9130D, FSL9130R, AO3401, FSL913AOR, FSL9230D, FSL9230R, FSL923AOD, FSL923AOR, FSS130D, FSS130R, FSS13AOD
History: 2SK3929-01MR | VN2224 | VN2410
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