FSL913AOD Datasheet. Specs and Replacement
Type Designator: FSL913AOD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO205AF
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FSL913AOD substitution
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FSL913AOD datasheet
fsl913ao.pdf
FSL913AOD, S E M I C O N D U C T O R FSL913AOR Radiation Hardened, September 1997 SEGR Resistant P-Channel Power MOSFETs Features Description 7A, -100V, rDS(ON) = 0.300 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MO... See More ⇒
fsl9130.pdf
FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 5A, -100V, rDS(ON) = 0.680 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA... See More ⇒
fsl9110.pdf
FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Features Resistant, P-Channel Power MOSFETs 2.5A, -100V, rDS(ON) = 1.30 The Discrete Products Operation of Intersil has developed a Total Dose series of Radiation Hardened MOSFETs specifically - Meets Pre-RAD Specifications to 100K RAD (Si) designed for commercial and military... See More ⇒
Detailed specifications: FSL23AOD, FSL23AOR, FSL430D, FSL430R, FSL9110D, FSL9110R, FSL9130D, FSL9130R, AO3401, FSL913AOR, FSL9230D, FSL9230R, FSL923AOD, FSL923AOR, FSS130D, FSS130R, FSS13AOD
Keywords - FSL913AOD MOSFET specs
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