FSL913AOD
MOSFET. Datasheet pdf. Equivalent
Type Designator: FSL913AOD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO205AF
FSL913AOD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSL913AOD
Datasheet (PDF)
6.1. Size:47K harris semi
fsl913ao.pdf 
FSL913AOD,S E M I C O N D U C T O RFSL913AORRadiation Hardened,September 1997 SEGR Resistant P-Channel Power MOSFETsFeatures Description 7A, -100V, rDS(ON) = 0.300 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MO
8.1. Size:53K intersil
fsl9130.pdf
FSL9130D,FSL9130R5A, -100V, 0.680 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 5A, -100V, rDS(ON) = 0.680 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA
9.1. Size:68K intersil
fsl9110.pdf
FSL9110D, FSL9110RData Sheet October 1998 File Number 4225.32.5A, -100V, 1.30 Ohm, Rad Hard, SEGR FeaturesResistant, P-Channel Power MOSFETs 2.5A, -100V, rDS(ON) = 1.30The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military
Datasheet: FSL23AOD
, FSL23AOR
, FSL430D
, FSL430R
, FSL9110D
, FSL9110R
, FSL9130D
, FSL9130R
, IRF1010E
, FSL913AOR
, FSL9230D
, FSL9230R
, FSL923AOD
, FSL923AOR
, FSS130D
, FSS130R
, FSS13AOD
.
