AO3160 Todos los transistores

 

AO3160 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AO3160
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.04 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 1.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm
   Paquete / Cubierta: SOT23A
     - Selección de transistores por parámetros

 

AO3160 Datasheet (PDF)

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AO3160

AO3160600V,0.04A N-Channel MOSFETGeneral Description Product SummaryThe AO3160 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels VDS 700V@150of performance and robustness in popular AC-DC ID (at VGS=10V) 0.04Aapplications. RDS(ON) (at VGS=10V)

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AO3160

AO3160E600V,0.04A N-Channel MOSFETGeneral Description Product Summary Logic Level Driving 4.5V VDS @ Tj,max 700V ESD Protection ID (at VGS=10V) 0.04A RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

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 ao3162.pdf pdf_icon

AO3160

AO3162600V,0.034A N-Channel MOSFETGeneral Description Product SummaryThe AO3162 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels VDS 700V@150of performance and robustness in popular AC-DC ID (at VGS=10V) 0.034Aapplications. RDS(ON) (at VGS=10V)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFZ24L | CS15N70F | AP18P10GI | 2SK1601 | NTD3055-094-1G

 

 
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