FSL913AOR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FSL913AOD,S E M I C O N D U C T O RFSL913AORRadiation Hardened,September 1997 SEGR Resistant P-Channel Power MOSFETsFeatures Description 7A, -100V, rDS(ON) = 0.300 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MO

FSL9130D,FSL9130R5A, -100V, 0.680 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 5A, -100V, rDS(ON) = 0.680 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

FSL9110D, FSL9110RData Sheet October 1998 File Number 4225.32.5A, -100V, 1.30 Ohm, Rad Hard, SEGR FeaturesResistant, P-Channel Power MOSFETs 2.5A, -100V, rDS(ON) = 1.30The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military