FSL913AOR Datasheet and Replacement
Type Designator: FSL913AOR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO205AF
FSL913AOR substitution
FSL913AOR Datasheet (PDF)
fsl913ao.pdf
FSL913AOD,S E M I C O N D U C T O RFSL913AORRadiation Hardened,September 1997 SEGR Resistant P-Channel Power MOSFETsFeatures Description 7A, -100V, rDS(ON) = 0.300 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MO
fsl9130.pdf
FSL9130D,FSL9130R5A, -100V, 0.680 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 5A, -100V, rDS(ON) = 0.680 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA
fsl9110.pdf
FSL9110D, FSL9110RData Sheet October 1998 File Number 4225.32.5A, -100V, 1.30 Ohm, Rad Hard, SEGR FeaturesResistant, P-Channel Power MOSFETs 2.5A, -100V, rDS(ON) = 1.30The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military
Datasheet: FSL23AOR , FSL430D , FSL430R , FSL9110D , FSL9110R , FSL9130D , FSL9130R , FSL913AOD , K3569 , FSL9230D , FSL9230R , FSL923AOD , FSL923AOR , FSS130D , FSS130R , FSS13AOD , FSS13AOR .
History: SSFN3313
Keywords - FSL913AOR MOSFET datasheet
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FSL913AOR replacement
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History: SSFN3313
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