AO3421 Todos los transistores

 ..1. Size:234K  aosemi
 ao3421.pdf

AO3421 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3421 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

 ..2. Size:1030K  kexin
 ao3421.pdf

SMD Type MOSFET P-Channel MOSFET AO3421 (KO3421) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-30V ID =-2.6 A (VGS =-10V) RDS(ON) 110m (VGS =-10V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 180m (VGS =-4.5V) +0.1 1.9 -0.1 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin

 0.1. Size:309K  aosemi
 ao3421e.pdf

AO3421E 30V P-Channel MOSFET General Description Product Summary VDS The AO3421E combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -3A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 0.2. Size:1856K  kexin
 ao3421e-3.pdf

SMD Type MOSFET P-Channel MOSFET AO3421E (KO3421E) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-30V ID =-3 A (VGS =-10V) 1 2 RDS(ON) 95m (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 160m (VGS =-4.5V) 1. Gate D 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol R

 0.3. Size:1703K  kexin
 ao3421e.pdf

SMD Type MOSFET P-Channel MOSFET AO3421E (KO3421E) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-30V ID =-3 A (VGS =-10V) 1 2 RDS(ON) 95m (VGS =-10V) +0.1 0.95-0.1 0.1+0.05 -0.01 RDS(ON) 160m (VGS =-4.5V) +0.1 1.9-0.1 1. Gate D 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

 0.4. Size:1179K  kexin
 ao3421-3.pdf

SMD Type MOSFET P-Channel MOSFET AO3421 (KO3421) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-30V ID =-2.6 A (VGS =-10V) 1 2 RDS(ON) 110m (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 180m (VGS =-4.5V) 1.9 -0.2 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol

 0.5. Size:866K  cn vbsemi
 ao3421e.pdf

AO3421E www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)