AO3435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO343520V P-Channel MOSFETGeneral Description Product SummaryThe AO3435 uses advanced trench technology to VDS = -20Vprovide excellent RDS(ON), low gate charge and ID = -3.5A (VGS = -4.5V)operation with gate voltages as low as 1.5V. This RDS(ON)

SMD Type MOSFETP-Channel MOSFETAO3435 (KO3435)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-20V ID =-3.5 A (VGS =-4.5V)1 2 RDS(ON) 70m (VGS =-4.5V) +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 90m (VGS =-2.5V) RDS(ON) 110m (VGS =-1.8V) RDS(ON) 130m (VGS =-1.5V)1. Gate2. Source3. Dr

SMD Type MOSFETP-Channel MOSFETAO3435 (KO3435)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.5 A (VGS =-4.5V)1 2 RDS(ON) 70m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 90m (VGS =-2.5V)1.9-0.2 RDS(ON) 110m (VGS =-1.8V) RDS(ON) 130m (VGS =-1.5V)1. Gate2. Source3

AO3434A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3434A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

AO343430V N-Channel MOSFETGeneral Description Product SummaryThe AO3434 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 4.2A (VGS = 10V)device is suitable for use as a load switch or in RDS(ON)

AO343820V N-Channel MOSFETGeneral Description Product SummaryThe AO3438 uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge andID = 3A (VGS = 4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

SMD Type MOSFETN-Channel MOSFETAO3434A (KO3434A)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON) 52m (VGS = 10V) 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 60m (VGS = 4.5V)+0.11.9 -0.2 RDS(ON) 78m (VGS = 2.5V)1. Gate2. SourceD 3. DrainGS Absolute Maximum Rati

SMD Type MOSFETN-Channel MOSFETAO3438 (KO3438)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 3 A (VGS = 4.5V)1 2 RDS(ON) 62m (VGS = 4.5V)+0.02+0.10.15 -0.020.95-0.1+0.1 RDS(ON) 70m (VGS = 2.5V) 1.9-0.2 RDS(ON) 85m (VGS = 1.8V)1. Gate2. SourceD3. DrainGS Absolute Maximum Rat

SMD Type MOSFETN-Channel MOSFETAO3434A (KO3434A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 4 A (VGS = 10V)1 2 RDS(ON) 52m (VGS = 10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 60m (VGS = 4.5V) RDS(ON) 78m (VGS = 2.5V)1. Gate2. Source3. DrainD GS Absolute Maximum Rati

SMD Type MOSFETN-Channel MOSFETAO3434 (KO3434)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 4.2 A (VGS = 10V)1 2 RDS(ON) 52m (VGS = 10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 75m (VGS = 4.5V) ESD Protected1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25P

SMD Type MOSFETN-Channel MOSFETAO3438 (KO3438)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 3 A (VGS = 4.5V)1 2 RDS(ON) 62m (VGS = 4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.1 RDS(ON) 70m (VGS = 2.5V) 1.9-0.1 RDS(ON) 85m (VGS = 1.8V)1. GateD2. Source3. DrainGS Absolute Maximum Ratings

SMD Type MOSFETN-Channel MOSFETAO3434 (KO3434)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 4.2 A (VGS = 10V)1 2 RDS(ON) 52m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 75m (VGS = 4.5V) ESD Protected1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25